Abstract
Tandem accelerators have been employed for ion implantation in the semiconductor industry. The advantages of tandem acceleration, such as reliability and simplicity, are well known. The limitations of these systems until the present have been beam current related. Tests of a new negative ion injector system based on charge exchange have shown its applicability in production MeV ion implantation systems. With a Na vapor charge exchange canal, measurements using mA beams of 45 keV 11B +, 31P +, and 75As + projectiles have yielded negative equilibrium charge state fractions of 10, 21, and 15%, respectively. In conjunction with a high current positive ion source, several hundred μA of B − and > 1 mA of P − and As − may be produced. The increase in the angular divergence of the ion beams due to multiple scattering in the Na vapor has been found to be minimal.
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