Abstract
A 6H-SiC thyristor has been fabricated and characterized. A forward breakover voltage close to 100 V and a pulse switched current density of 5200 A/cm/sup 2/ have been demonstrated. The thyristor is shown to operate under pulse gate triggering for turn-on and turn-off, with a rise time of 43 ns and a fall time of less than 100 ns. The forward breakover voltage is found to decrease by only 4% when the operating temperature is increased from room temperature to 300/spl deg/C. It is found that anode ohmic contact resistance dominates the device forward drop at high current densities.
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