Abstract
This paper presents a high conversion gain doubler-balanced active frequency doubler for millimeter-wave application. The frequency doubler contains an improved push-push structure, two quarter-wavelength transmission lines, and output power enhancement using negative resistor. The 3-dB band of the frequency doubler is 19~28 GHz of input frequency, the maximum conversion gain reaches -5.3 dB, the fundamental rejection is above 55 dB, and the power consumption is 17 mW under 1.2V VDD. The frequency doubler is designed in 65nm CMOS process.
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