A high-conductivity insulated gate bipolar transistor with Schottky hole barrier contact**Project supported by the National High Technology Research and Development Program of China (No. 2014AA052601) and the National Natural Science Foundation of China (No. 51277060).

Abstract

This letter proposes a high-conductivity insulated gate bipolar transistor (HC-IGBT) with Schottky contact formed on the p-base, which forms a hole barrier at the p-base side to enhance the conductivity modulation effect. TCAD simulation shows that the HC-IGBT provides a current density increase by 53% and turn-off losses decrease by 27% when compared to a conventional field-stop IGBT (FS-IGBT). Hence, the proposed IGBT exhibits superior electrical performance for high-efficiency power electronic systems.