Abstract
A high brightness GaN laser diode array with an output power of 78 W and an average lateral beam-quality factor of 3.5 for 38 emitters has been realized by the new design method of lateral-corrugated waveguides (LCWGs). The LCWG we propose was optimized by calculating both output power and beam-quality so as to maximize lateral brightness. As a result, the maximum output power of 117 W was obtained and a lateral brightness increased 1.6 times compared to the previous LCWG array. Finally, a high brightness GaN laser source was achieved by combining the beams from 38 emitters for GaN laser processing.
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