Abstract
Introduces an isolation method for SOI MEMS technologies, and demonstrates a high aspect ratio 2D gimbaled microscanner with large static rotation using the method. The proposed isolation method, termed backside island process, provides electrical isolation and mechanical coupling of SOI structures through deep reactive ion etching of the backside substrate. The fabricated 2D mirrors perform large static optical deflection from -20.3/spl deg/ to 15.6/spl deg/ by outer gimbal and from 0/spl deg/ to -11.9/spl deg/ by inner mirror.
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