Abstract
A novel Hall device with enhanced magnetosensitivity has been implemented and tested. For the first time the transducer efficiency of the Hall sensor is increased due to the growth of surface charge density on Hall boundaries by reducing the area of the edges on which the Lorentz force deflects the carriers. The original shape of the Hall sides represents an isosceles acute triangle on whose vertex the Hall contact is formed. Discrete structures with four terminals and a three-contact version are developed in n-Si wafers. The experimentally obtained sensitivity is about 18% greater than the efficiency of a standard Hall element made of the same material and with the same input conditions. The new Hall sensors allow IC realization and are very promising for magnetometry.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
