Abstract
A grounded co-planar waveguide (GCPW) MEMS switch is presented. The proposed switch has a movable SiN membrane with a signal line and ground lines above a dielectric-air-metal (DAM) cavity on which a ground metal is patterned, resulting in a structure of GCPW transmission line. The electrostatic force makes an RF short path to the ground metal on the bottom of the DAM cavity with metal-to-metal contact. The ground metal which covers silicon substrate makes the switch to be on a low-resistivity silicon substrate. The measured results of the switch validate the proposed structure of the switches utilizing the DAM cavity.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
