Abstract
A photodetector based on graphene-silicon Schottky diode with graphene oxide (GO) interlayer was prepared in this research. The GO interlayer suppressed the dark current, and increased the photocurrent 2.73 times. With the reverse bias of 2 V, the responsivity of Gr/GO/n-Si Schottky photodiode was 0.65 A/W under 633 nm illumination, meanwhile the ON/OFF ratio reaches 2.73 × 105 due to the insertion of GO interlayer. The characterization of photoelectric properties showed stable photo sensing performance with the increase of bias voltage and incident light power. The response time and recovery time were 1 ms, which indicated that the response speed of graphene-silicon Schottky photodiode was well preserved after inserting GO interlayer.
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