Abstract

This work introduces a Graphene-based multi-layer reconfigurable device as a wave duplexer in the THz frequency range. Adjusting transmitting and reflecting parts of incident waves alongside controlling absorption provides the interesting capability to select target waves in different frequencies. The proposed device includes periodic graphene patterns on both sides of silicon dioxide as substrate. Additionally, the patterns are biased differently compared to conventional patterns which makes it possible to achieve two distinct behaviors versus frequency. Exploiting equivalent circuit models (ECM) for graphene and dielectric, the whole device is modeled by passive RLC circuits. According to simulation results, the proposed device can transmit and reflect incident THz waves at desired frequencies in 0.1–30 THz which makes it an ideal candidate for manipulating THz waves in terms of transmission and reflection.

Highlights

  • In 2002, a wide range of 0.1 THz – 30 THz was introduced as the "THz gap"

  • In 2005, the THz gap was defined as the spectrum of the region 0.1 THz – 10 THz

  • This band has been considered by many researchers, which can be attributed to the unique properties of this frequency range

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Summary

A Graphene-Based THz Wave Duplexer and Filter: Switching via Gate Biasing

Version of Record: A version of this preprint was published at Optik on February 1st, 2022. Amir Ali Mohammad Khani Department of Electrical Engineering, College of Technical and Engineering, Saveh Branch, Islamic Azad

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