A Global Model of Chemical Vapor Deposition of Silicon Dioxide by Direct-Current Corona Discharges in Dry Air Containing Octamethylcyclotetrasiloxane Vapor

Abstract

A model of the electron distribution in direct current corona plasmas is combined with a global chemistry model and a two-dimensional transport model to predict the rate of chemical vapor deposition of silicon dioxide on the discharge wire in both positive and negative discharges in dry air containing octamethylcyclotetrasiloxane. The gas-phase chemistry includes reactions to form atomic oxygen (O) and additional global reactions to form gaseous silicon dioxide precursors by the impact reactions of electrons and atomic oxygen with silicone molecules. Surface chemistry is approximated by a single step global reaction from gaseous to solid silicon dioxide. The rate coefficient between atomic oxygen and octamethylcyclotetrasiloxane is estimated from prior experiments to be on the order of 10 −12 cm 3 /molecule-s. The effects of discharge polarity, current, wire radius and air velocity (Peclet number for mass transfer) on the deposition rate are considered. Deposition rates can be minimized by using positive coronas instead of negative coronas for Peclet number less than 18.5. At higher Peclet numbers, the deposition rate is slightly higher in positive corona discharges, but devices used indoors should continue to use the positive corona in order to minimize the production of ozone. The deposition rate in the positive corona is relatively insensitive to air velocity for velocities from 0.044 to 10 m/s −1 . However,it may be minimized by operating the corona with the lowest current that provides adequate performance (e.g., particle charging) and the smallest wire that provides adequate mechanical strength.