A Germanium Based Quantum Well Complementary Metal-Oxide-Semiconductor Transistor

Abstract

Germanium is recognized as an important prospective material due to its great carrier mobility. The current design and research of GeSn channel field effect transistors are far from mature. Especially the complementary Ge-based CMOS device is rarely reported. It significantly limits the application and development of Ge-based MOS technology. Based on this, a Si0.2Ge0.66Sn0.14-Ge0.82Sn0.18-Ge double heterojunction quantum well NMOS and PMOS are proposed. Benefiting from the high carrier mobility of Ge and the increased mobility brought by the quantum well, the proposed NMOS and PMOS device achieves mA level output current at 1 V gate bias, and the surface channel is significantly suppressed. Based on quantum well NMOS and PMOS, a new CMOS device compatible with the Si process is constructed. The quantum well CMOS inverter has a faster voltage conversion rate, a 4-fold reduction in propagation delay, a 10% reduction in output overshoot voltage, and a more robust driving capability than the Si-based CMOS inverter.