Abstract
Gas cooling of wafers during ion implantation is a proven technique for wafer temperature control. Application of this technique in the implanter industry has prompted a basic study of the underlying principles involved. Models were initially formulated on well-founded engineering principles. Experiments were performed to test the model and deduce any unknown variables. The resulting mathematical models are presented here, with experimental data that shows good agreement with the models. Analysis of other heating factors affecting successful ion implantation are also discussed.
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