Abstract
A generalized version of Gummel's integral charge-control relation (ICCR) is derived, which-in contrast to the classical ICCR-is valid also for HBTs. As a drawback of this generalized ICCR (GICCR) the required separation of the total minority charge into the contributions of the different transistor regions is not possible by measurements. Therefore, a simplified version of the GICCR is presented the parameters of which can be determined experimentally in a simple manner for the operating range of interest. This approach could provide a powerful basis for the development of compact HBT models for circuit simulation. The validity of the different approaches is verified by one- and two-dimensional device simulation for several practical SiGe-base HBTs with different doping profiles and Ge mole fractions.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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