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Abstract
A recently developed surface-channel p-MOS lifetime prediction technique based on injection gate charge is extended to buried-channel devices. It is shown that a more general form of the equation governing the degradation accurately describes the degradation behavior of both surface-channel and buried-channel transistors, indicating that the method has general applicability for p-channel transistors.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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