Abstract
The complete general solution of nonlinear 1-D undoped Poisson’s equation, in both Cartesian and cylindrical coordinates, is derived by employing a special variable transformation method. A general model platform for various types of emerging multi-gate MOSFETs is further constructed and verified with TCAD simulations. It is shown that this model platform is suitable for analyzing a series of emerging devices, such as double-surrounding-gate, inner-surrounding-gate, and outer-surrounding-gate nanoshell MOSFETs, all of which require different boundary conditions from the conventional gate-all-around nanowire device.
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