A gate-tunable symmetric bipolar junction transistor fabricated via femtosecond laser processing.

Bao-Wang Su,De-Kang Li,Hao-Wei Guo,Jian-Guo Tian,Xi-Lin Zhang,Bin-Wei Yao,Xu-Dong Chen,Zhi-Bo Liu,Xiao-Kuan Li,Kai-Xuan Huang

doi:10.1039/d0na00201a

Bao-Wang Su, De-Kang Li + Show 8 more

Open Access

https://doi.org/10.1039/d0na00201a

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Abstract

Two-dimensional (2D) bipolar junction transistors (BJTs) with van der Waals heterostructures play an important role in the development of future nanoelectronics. Herein, a convenient method is introduced for fabricating a symmetric bipolar junction transistor (SBJT), constructed from black phosphorus and MoS2, with femtosecond laser processing. This SBJT exhibits good bidirectional current amplification owing to its symmetric structure. We placed a top gate on one side of the SBJT to change the difference in the major carrier concentration between the emitter and collector in order to further investigate the effects of electrostatic doping on the device performance. The SBJT can also act as a gate-tunable phototransistor with good photodetectivity and photocurrent gain of β = ∼21. Scanning photocurrent images were used to determine the mechanism governing photocurrent amplification in the phototransistor. These results promote the development of the applications of multifunctional nanoelectronics based on 2D materials.

Highlights

The development of microelectronics technology is inseparable from the 1951 invention of bipolar junction transistors (BJTs), which has helped to produce the digital revolution over the past half-century.[1,2] A BJT, as a three-terminal device, is the fundamental building block of modern electronic devices, and its main feature is signal gain.[3]
We present a PNP symmetric bipolar junction transistor (SBJT) fabricated with p-type black phosphorus (BP) and n-type MoS2 with femtosecond laser processing (FSLP).[43,44,45]
Scanning photocurrent images (SPI) were used to determine the mechanism governing photocurrent ampli cation in the SBJT, which was reported in our previous studies.[45,46,47]

Summary

Introduction

The development of microelectronics technology is inseparable from the 1951 invention of bipolar junction transistors (BJTs), which has helped to produce the digital revolution over the past half-century.[1,2] A BJT, as a three-terminal (emitter, base and collector) device, is the fundamental building block of modern electronic devices, and its main feature is signal gain.[3]. I–V curves from the two p–n junctions (i.e., the le and right BP/MoS2 regions) of the SBJT are shown in Fig. 3a and b, respectively.

Results

Conclusion