A Gate Driver with Integrated Dead-Time Controller

Abstract

Deadtimes are required to avoid simultaneous conduction of high-side and low-side power transistors in half-bridge power converters. During these secure times, free-wheeling current flow generates extra power losses. Very short deadtimes are desired but they cannot be safely set in conventional isolated power converters because of a digital input propagation delay mismatch. A specific deadtime management is introduced in this paper to ensure proper operation of a high-voltage synchronous power converter. A controller integrated in each isolated gate driver secures synchronous switching by detecting the opposite switch turn-off before turn-on. With such a selfswitching technique, very short but safe nonoverlap times can be set. A gate driver has been implemented in a 0.35 μm 20-V CMOS process. The monolithically integrated controller consumes only 140 μA and 0.22 mm2 of silicon area. The proposed local deadtime management has been validated in two synchronous buck converters without external free-wheeling diodes: a 500-W 250-V to 55-V converter based on SiC JFETs and a 30-W 45-V to 10-V converter based on eGaN FETs. In either case, the proposed controller allows a higher efficiency from 10% of the rated load with resulting deadtimes as short as 15 ns.