Abstract
This article presents the winning power amplifier implemented with a gallium nitride (GaN) high electron mobility transistor (HEMT) and having power-added efficiency (PAE) greater than 85%. It will be shown that computer-aided design (CAD) simulation tools, accurate device models, and sensible design rules can produce first-pass power amplifier design success. An overview of design, fabrication, and testing processes is presented here together with measured results.
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