Abstract
A GaAs nanowire array solar cell with an independently verified solar energy conversion efficiency of 15.3% and open-circuit voltage of 0.906 V under AM1.5g solar illumination at 1-sun intensity has been fabricated. This is the highest published efficiency for nanowire array solar cells and is twice the prior record for GaAs nanowire array solar cells. The solar cell has been fabricated by substrate-based epitaxy but is structurally compatible with substrate-less aerotaxy fabrication, providing a path to high-volume manufacturing. The short-circuit current of 21.3 mA/cm2 was generated with axial p-n junction GaAs cores covering 13% of the surface area, which is a volume of GaAs equivalent to a 370-nm-thick planar layer.
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