Abstract
We demonstrate operation of a GaAs-based self-aligned stripe (SAS) distributed feedback (DFB) laser. In this structure, a first order GaInP/GaAs index-coupled DFB grating is built within the p-doped AlGaAs layer between the active region and the n-doped GaInP opto-electronic confinement layer of a SAS laser structure. In this process no Al-containing layers are exposed to atmosphere prior to overgrowth. The use of AlGaAs cladding affords the luxury of full flexibility in upper cladding design, which proved necessary due to limitations imposed by the grating infill and overgrowth with the GaInP current block layer. Resultant devices exhibit single-mode lasing with high side-mode-suppression of >40 dB over the temperature range 20 °C–70 °C. The experimentally determined optical profile and grating confinement correlate well with those simulated using Fimmwave.
Highlights
GaAs-based distributed feedback (DFB) lasers provide a robust, portable and low cost solution to enable a broad range of applications in spectroscopy, gas sensing, THz generation, and display
We have previously reported use of a GaAs/InGaP regrowth process to enable self-aligned stripe (SAS) lasers to be manufactured on GaAs [6]
We have demonstrated a GaAs-based DFB laser incorporating a first order GaInP/GaAs index-coupled DFB grating built within a SAS buried waveguide structure
Summary
GaAs-based distributed feedback (DFB) lasers provide a robust, portable and low cost solution to enable a broad range of applications in spectroscopy, gas sensing, THz generation, and display. 100 nm p-doped GaAs was overgrown to infill and planarize the index-coupled DFB grating, before 600 nm n-doped GaInP (lattice-matched to GaAs) opto-electronic confinement layer, and 20 nm of GaAs completed the overgrowth.
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