Abstract
A two/three stage monolithic silicon low noise amplifier has been designed utilizing SPICE modeling techniques. The circuit design architecture is based on high frequency, small signal BJTs, consisting of an grounded emitter stage at the input and a Darlington configured pair at the device output. A resistor network, with a bypass capacitor, is utilized not only to provide proper DC biasing for each stage, but also obtain impedance matching to 50 ohms at the circuit input and output and to provide RF feedback for the desired broad band gain response. A patented HMIC (Heterolithic Microwave Integrated Circuit) glass process is employed to provide both the required collector isolation between active device stages and as an extremely low loss dielectric medium for minimum parasitic, high Q passive, reactive elements.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
