A Fully Integrated RF CMOS Front-End IC for Connectivity Applications

Abstract

A fully integrated RF CMOS front-end (FE) IC (FEIC), which is fabricated with a 0.13- $\mu\text{m}$ bulk RF CMOS process for wireless local area network/Bluetooth (WLAN/BT) applications, is presented. The proposed FEIC includes a dual-mode power amplifier (PA), integrated switches, and a shared low-noise amplifier (LNA) without external matching networks. The proposed compact reconfigurable matching network satisfies the optimum matchings for a multimode PA and a shared LNA. Measurements showed a 16.2-dBm $P_{\mathrm{OUT}}$ , with a 6.7% power-added efficiency (PAE), at −34-dB error vector magnitude, with an 802.11ac signal source, with a high-power-mode WLAN PA. With a low-power-mode BT PA, it showed a 13.7-dBm $P_{\mathrm{OUT}}$ , with a 10.9% PAE, with a 2.1+EDR signal. The shared LNA has a 14.8-dB gain and a 3.6-dB noise figure. All the measurements were carried out, including integrated mode-change switches for time-division duplex operation without any digital predistortion.