A fully integrated half-bridge driver circuit in All-GaN GAN-IC technology

Abstract

To unlock the full potential of fast switching GaN technology, monolithic integration of power circuit is crucial. GaN-IC ensures a fast efficient switching operation by reducing the parasitic inductance of interconnections significantly. In this paper, we demonstrate a monolithically integrated half-bridge power switch with its corresponding driving stage and the protection circuits that is realized by using our GAN-on-SOI technology. A low gate threshold voltage along with a low gate overdrive makes the driving of a GaN HEMT difficult. An optimized gate driver design is important to fully utilize a GaN power switch. This is also crucial for overall system efficiency, robustness, and EMI performance. Along with the design description this paper discusses the challenges and the design considerations of the GaN power IC.