Abstract
AbstractA fully integrated dual‐band low‐noise amplifier (LNA) implemented in a standard 0.18‐μm 1P6M CMOS process is presented in this paper. The LNA draws 12‐mA current from a 1.5‐V voltage supply and achieves power gains of 25 and 10 dB, and noise figures of 3.6 and 4 dB at 2.4 and 5.6 GHz respectively. © 2004 Wiley Periodicals, Inc. Microwave Opt Technol Lett 41: 297–301, 2004; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20121
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