Abstract
A floating-gate avalanche-injection m.o.s. (FAMOS) charge-storage device is used as the basic nonvolatile memory element. The memory is organized as 256 words of 8 bits, it is fully TTL compatible, and can be operated in both the static or dynamic mode. The memory array was successfully fabricated with silicon gate m.o.s. technology yielding functional devices with access times of 800 ns in the static mode and 500 ns in the dynamic mode of operation. The memory chip is assembled in a 24-lead dual-in-line package.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
