Abstract
Application of the full three-dimensional (3-D) adaptive finite volume scheme as presented in a companion paper (Part I) to hydrothermal and two variants of Czochralski (Cz) crystal growth processes is presented. A composite fluid-superposed porous layer formulation with non-Darcian flow model is employed to model the hydrothermal system to demonstrate the versatility of this formulation. The unified formulation is then employed to model the Cz process, which is the main focus here. The model takes into account the irregular geometries, nonplanar and moving interfaces, and multiple driving forces that typically characterize a generic class of crystal growth processes. Simulation of the low and high pressure Cz growth of silicon and indium phosphide, respectively, reveal complex three dimensionality in flow, heat transfer, and interface dynamics, which have a profound effect on other quality affecting phenomena such as defect generation, segregation, and so on.
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