Abstract
Application of the full three-dimensional (3-D) adaptive finite volume scheme as presented in a companion paper (Part I) to hydrothermal and two variants of Czochralski (Cz) crystal growth processes is presented. A composite fluid-superposed porous layer formulation with non-Darcian flow model is employed to model the hydrothermal system to demonstrate the versatility of this formulation. The unified formulation is then employed to model the Cz process, which is the main focus here. The model takes into account the irregular geometries, nonplanar and moving interfaces, and multiple driving forces that typically characterize a generic class of crystal growth processes. Simulation of the low and high pressure Cz growth of silicon and indium phosphide, respectively, reveal complex three dimensionality in flow, heat transfer, and interface dynamics, which have a profound effect on other quality affecting phenomena such as defect generation, segregation, and so on.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.