Abstract
A frequency reconfigurable dipole antenna based on a silicon radiator is presented. The silicon radiator is activated with the aid of highly dense solid-state plasma by injecting carriers into the intrinsic region of p-i-n diodes. The fabrication and design guideline of the reconfigurable dipole antenna with this plasma radiator are described. When the plasma radiator is activated or deactivated, the length of the dipole arm changes, which means that the operating frequency of the dipole antenna is reconfigurable. When all the channels in the plasma radiator are activated, the operating frequency is tuned from 6.3 GHz to 4.9 GHz. The measured tunable bandwidth of our fabricated dipole antenna is approximately 31%, which is a practical value in comparison to conventional frequency reconfigurable antennas whose tunable bandwidth is in a range from 20% to 50%. To further support the validity of our results, we provide the well-matched simulation results from an antenna simulation. These results demonstrate that silicon with its commercial technology, which has not attracted attention in comparison to a metal antennas, is a promising tunable material for a frequency reconfigurable antenna. This plasma-based reconfigurable antenna has great potential for use in the dynamic communication environment.
Highlights
A frequency reconfigurable dipole antenna based on a silicon radiator is presented
To communicate with various devices having different operating frequencies, a frequency reconfigurable antenna capable of adjusting its resonant frequency would be useful; the development of such an antenna has become a focus of research
A microelectromechanical systems (MEMS) switch, a reconfigurable feeding network, or tunable materials can be adapted for a frequency reconfigurable antenna[12,13,14]
Summary
A frequency reconfigurable dipole antenna based on a silicon radiator is presented. The silicon radiator is activated with the aid of highly dense solid-state plasma by injecting carriers into the intrinsic region of p-i-n diodes. As a plasma silicon antenna, because carriers are injected into solid-state silicon to form plasma with high conductivity.
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