Abstract
A frequency-dependent capacitance–voltage (CV) model is developed for thin-film transistors (TFTs). The model includes not only a static CV model for channel charge analysis and a transmission line method for $RC$ delay effect but also the frequency-dependent trapped charges effect on the measured capacitance. The complete model based on the same set of model parameters is verified by the measured CV characteristics of top-gated self-aligned poly-Si TFTs with varied frequencies from 10 kHz to 1.5 MHz for two devices of different channel lengths, and at both room temperature and an elevated temperature of 100 °C.
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