Abstract

Low energy FIB less than 1 keV is useful for shallow doping or gas-assisted etching without damage to the substrate. An optical system with a retarding field has the ability to focuse an ion beam of low energy into a spot less than 0.1 μm in diameter. An improved type of the retarding mode optical system with a retarding electrode was designed, and some optical property calculations were achieved for this system. A retarding electrode above the specimen surface enables SE detection, but it worsens the focusing properties. Better focusing conditions are found by introducing a condenser lens to this system.

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