Abstract

In order to obtain low-k material with good comprehensive properties, a trifluoromethyl-containing organosiloxane with thermocrosslinkable vinyl and benzocyclobutene groups is designed and synthesized through the Piers-Rubinsztajn reaction. After treating at high temperature, the organosiloxane changed to form a cross-linked polysiloxane (called as c-FSi-BCB). c-FSi-BCB exhibits good dielectric properties with dielectric constant (Dk ) of 2.60 and dielectric loss (Df ) of 1.49 × 10-3 at a high frequency of 5GHz. Importantly, c-FSi-BCB maintains such good dielectric properties and exhibits low water uptake of below 0.076%, even after immersing it in boiling water for 96 h. c-FSi-BCB also displays good thermostability with a 5% weight loss temperature (T5d ) of 453 °C. These data indicate that this fluorinated organosiloxane is suitable as the matrix resin for the fabrication of devices used in 5G communication.

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