Abstract
A 128-Mb silicon-on-insulator dynamic random access memory with floating-body cell (FBC) has been successfully developed for the first time. Two technologies have been newly implemented, namely: 1) the optimized well structure and 2) Cu wiring. The well design has been optimized both for the array device and the peripheral circuit in order to realize full functionality and good retention characteristics. Cu wiring has been used for the bit line and the source line, which increases the signal of the worst bit in the array and also realizes full compatibility with the standard CMOS process. Scalability of FBC down to 45-nm CMOS technology node has been investigated by a device simulation. The signal and the maximum electric field can be maintained constant with the reduction of the device dimensions and the operation voltage
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