Abstract
A flexible magnetic detector based on ferroelectric/ferromagnetic (PZT/Metglas) thin film heterostructure is developed by using etching and transferring technique. The transferred PZT film still exhibits (001)-oriented or very highly textured structure with good ferroelectricity (P r = 50 μC cm−2 and E c = 150 kV cm−1). Magnetoelectric (ME) voltage coefficient of the PZT/Metglas film heterostructure approaches 5.1 V cm−1 Oe at resonance frequency (57.5 kHz). The flexible detector has a sensitivity of AC 0.3 nT and DC 1 Oe with high stability for magnetic field detection. Our demonstration provides a viable approach for realizing ME thin film transfer technology, which is of great significance for future applications on flexible magnetic detectors.
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