Abstract
An ultra-thin (15 nm) InGaAs nanomembrane field-effect phototransistor is transferred entirely from a rigid InP substrate onto a flexible SU-8 on a polydimethylsiloxane substrate. The transferred InGaAs device exhibits wide-band spectral response tunability up to 1.8 µm, from the visible to near-infrared light. Using an epitaxial lift-off process of InGaAs-on-InP MOSHEMT, the transferred device is inverted with a fully exposed channel for photosensitivity enhancement, while retaining three terminals for photocurrent amplification and modulation. The photocurrent can be tuned ∼5 orders over a gate bias range of 6 V. On-state photo-responsivities of 350 A/W to 15 A/W for 0.6 µm and 1.8 µm of light, respectively, is measured, ∼2 × higher than existing silicon and III-V photodetectors. Furthermore, the device shows no electrical performance degradation when flexed down to 10-cm radius, demonstrating suitability for conformal surface sensor applications.
Highlights
We show a novel flexible photoFET architecture based on an inverted thin-body (15 nm) InGaAs (In = 52%) nanomembrane with a theoretical direct bandgap of ∼0.7 eV.28
Blockage of incident light by the contact metal is completely avoided as compared to the same device with top metallization
Through biasing of the three terminals, the photoFET photocurrent can be tuned by ∼5 orders over incident light wavelengths of 0.6 μm–1.8 μm
Summary
Stretchable conductive nanocomposite based on alginate hydrogel and silver nanowires for wearable electronics APL Materials 7, 031502 (2019); https://doi.org/10.1063/1.5063657 Bilayer nanocarbon heterojunction for full-solution processed flexible all-carbon visible photodetector APL Materials 7, 031501 (2019); https://doi.org/10.1063/1.5054774 From flexible electronics technology in the era of IoT and artificial intelligence toward future implanted body sensor networks APL Materials 7, 031302 (2019); https://doi.org/10.1063/1.5063498
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