Abstract

A new, flattened-pear shaped photodiode structure has been developed to reduce smear and to increase photo-sensitivity in CCD image sensors. The new structure features a wide, low-concentration N- layer formed below the conventional photodiode N layer. The new photodiode was designed by using a new parameter deduced from simulated potential-profiles to help optimize the Nlayer conditions. The new structure was applied to a 2/3-inch 2M pixel interline-transfer CCD (IT-CCD) image sensor, and it has achieved a low smear (-85 dB) as well as high sensitivity (35 nA/1x). >

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.