Abstract

In order to eliminate the fixed-pattern noise (FPN) in the output image of time-delay-integration CMOS image sensor (TDI-CIS), a FPN correction method based on gray value compensation is proposed. One hundred images are first captured under uniform illumination. Then, row FPN (RFPN) and column FPN (CFPN) are estimated based on the row-mean vector and column-mean vector of all collected images, respectively. Finally, RFPN are corrected by adding the estimated RFPN gray value to the original gray values of pixels in the corresponding row, and CFPN are corrected by subtracting the estimated CFPN gray value from the original gray values of pixels in the corresponding column. Experimental results based on a 128-stage TDI-CIS show that, after correcting the FPN in the image captured under uniform illumination with the proposed method, the standard-deviation of row-mean vector decreases from 5.6798 to 0.4214 LSB, and the standard-deviation of column-mean vector decreases from 15.2080 to 13.4623 LSB. Both kinds of FPN in the real images captured by TDI-CIS are eliminated effectively with the proposed method.

Highlights

  • Time-delay-integration (TDI) camera is a special kind of line-scan camera, which captures images through pixels arranged in an area array and works in line-scan mode

  • In order to remove both kinds of stripes in the output image of TDI-CMOS image sensor (TDI-CIS), a fixed-pattern noise (FPN) correction method based on gray value compensation is proposed

  • In order to validate the effectiveness of the proposed method, a TDI CMOS imaging system based on a 128-stage TDI-CIS with on-chip analog accumulator is designed, and the following experiments are conducted

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Summary

Introduction

Time-delay-integration (TDI) camera is a special kind of line-scan camera, which captures images through pixels arranged in an area array and works in line-scan mode. It is widely used for high-quality and low-noise imaging even under low illumination and at high scanning speed. The. TDI technique can be applied on charge-coupled device (CCD) which allows noiseless accumulation of signals in charge domain [2]. It is more difficult to implement on-chip low-noise accumulation in analog domain and synchronous signal capturing of the image for all pixels in the same column with CMOS than with CCD. The key technique in TDI-CMOS image sensor (TDI-CIS) is the signal accumulator

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