Abstract

The on-time based synchronous boost converter with a new reverse phase ripple injection (RPRI) compensation method has been presented in order to support high density and high data rate SSD (Solid State Drive) memory. The proposed RPRI compensation method achieves stability with a fast load transient response. Moreover, the proposed adaptive on-time (AOT) generator fixes switching frequency as constant in a continuous conduction mode (CCM). In addition, the proposed RPRI and AOT control method allows smooth mode transition between CCM (Continuous Conduction Mode) and DCM (Discontinuous Conduction Mode) mode. The proposed boost converter is manufactured by BCD 0.13 μm process and the chip size is 2.4 mm × 0.93 mm. The typical input voltage is 3.3V and the output voltage is 12V. We can achieve the measured results that ±1.6% of dynamic load regulation from 1mA to 350mA with 100mA/μs and the peak power efficiency is 90.3%. Also, the proposed boost converter achieves small switching frequency variation of ΔF SW /F SW = 1% in case of 300mA load change.

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