Abstract
Radio frequency (RF) high-power bipolar transistors are often constructed with the collector accessible at the bottom of the device. Characterization is carried out substrate mounted devices. The classical methods developed for the on wafer capacitance-voltage (CV) and alternating current (ac) measurement of grounded devices are then no longer applicable. A (general) deembedding algorithm is presented in which the medium surrounding the transistor is taken to be a generic five port and the transistor is treated as a floating two port. Using this approach, one can model a wide variety of configurations, including coupled lines, bondwire complexes with mutual coupling, vies and packages enabling one pass deembedding. Use of this algorithm facilitates an integrated approach improving accuracy and speed. Implementation of the five-port algorithm in HP's-microwave design software, MDS, and HP's parameter extraction software, IC-CAP as well as its application to high-frequency power transistor modeling are described.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: IEEE Transactions on Instrumentation and Measurement
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
