A first principle study of pristine and BN-doped graphyne family

Abstract

Based on first principle calculation using generalized gradient approximation, we report electronic properties of graphyne and its related structures (graphdiyne, graphyne-3, graphyne-4). Boron and nitrogen atoms are systematically substituted into the position of carbon atom and the corresponding changes of the properties are reported. All the structures are found to be direct band gap semiconductors with band gap depending on the concentration and position of the doping material. Our band structure calculation clearly shows that the band gap can be tuned by B–N doping and the spin-polarized calculation depicts the nonmagnetic nature of these structures. The possibility of modulating the band gap provides flexibility for its use in nanoelectronic devices. Projected density of state (PDOS) analysis shed insights on the bonding nature of these novel materials, whereas from the view point of Crystal Orbital Hamilton Population (–COHP) analysis, the nature of chemical bonding between neighbouring atoms and the orbital participating in bonding and antibonding have been explored in details.