Abstract
A finite element, resistive network analog model is presented and applied to p- i- n magnetodiodes at a microwave frequencies. The network analog model is outlined and verified with microwave measurements on a mesa-style p- i- n diode. The microwave measurements, coupled with data obtained by the model, are shown to provide a measure of the ambipolar mobility in the i-region of the semiconductor device. The magnetosensitivity of the magnetodiode as a function of geometry is also discussed.
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