A FinBOX Based Ge FinEHBTFET: Design and Investigation

Abstract

In this work, we propose a Germanium Fin Buried Oxide (FinBOX) Fin Electron-Hole Bilayer Tunnel FET (FBF-EHBTFET) structure. The proposed structure eliminates the gated underlaps and corner effect and also leads to an improved parasitic performance. This also reduces the device base area by ~ 25%. Further, the FinBOX provides an improved OFF state leakage suppression of more than three orders in comparison to the conventional FinEHBTFET. The proposed FinBOX EHBTFET with vertical non-gated underlaps also provides an excellent ION/IOFF ratio > 2 × 108 at VGS=VDS = 0.5 V. Furthermore, the leakage suppression and reduced miller capacitance effect provides an excellent transient response with a better voltage scalability window when scaled from VDD = 0.5 V to 0.4 V. A ~ 41% improved total propagation delay is achieved at VDD = 0.4 V with ~ 61% suppressed overshoot.