Abstract
A silicon bipolar transistor operating in the avalanche region was optically triggered into secondary breakdown. This transistor has been given the name fiber-optically triggered avalanche transistor (FOTAT). The FOTAT acts as an optical power discriminator. That is, secondary breakdown occurs when the triggering optical power exceeds the triggering threshold of the FOTAT. This secondary breakdown is seen as a negative resistance between the collector and emitter. High voltage (>100 V) nanosecond transition duration pulses are generated using this negative resistance.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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