Abstract
Tungsten disulfide (WS2), with indirect-direct bandgap transition when thinned down to atomically thin flake, provides intriguing applications in next-generation optoelectronics. Here, we develop a feasible approach to fabricate two-dimensional (2D) WS2 flakes by the evaporation and sulfurization of W film using S powder. The layer number and lateral dimension of the as-grown WS2 flakes are confirmed by Raman spectroscopy, photoluminescence (PL), optical microscopy, and atomic force microscopy (AFM). The evolution of the layer number and edge length of the flakes is attributed to the concentration gradient of W vapor on the substrate surface in the atmosphere. Our result opens a novel pathway to fabricate other 2D transition metal dichalcogenides (TMDs) and construct 2D TMDs-based heterostructures.
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