Abstract

The performance of a novel three-phase four-leg fault-tolerant T-Type inverter topology is presented in this paper, which significantly improves the inverter's fault-tolerant capability regarding device switch faults. In this new modular inverter topology, only the redundant leg is composed of Silicon Carbide (SiC) power devices and all other phase legs are constituted by Silicon (Si) devices. The addition of the redundant leg, not only provides fault-tolerant solution to switch faults that could occur in the T-Type inverter, but also can share load current with other phase legs. Moreover, quasi zero-voltage switching (ZVS) and zero-current switching (ZCS) in the Si Insulated-Gate Bipolar Transistors (IGBTs) of the main phase legs can be achieved with the assistance of SiC Metal-Oxide Semiconductor Field-Effect Transistors (MOSFETs) in the redundant leg. Simulation and experimental results are given to verify the efficacy and merits of this high-performance fault-tolerant inverter topology.

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