Abstract
The JFET-CMOS-SIMOX technology allows for circuit design able to comply with the requirements set by high-luminosity experiments. This process combines the high speed of CMOS on SIMOX and the low noise and intrinsic radiation hardness properties of the JFETs. These performances have been exploited in the realization of a 32-channel amplifier system for microstrip detectors. Each channel consists of a charge-sensitive preamplifier and a continuous-time filter, implementing a signal shaping with 25 ns peaking time. The characteristics of the system are fully described in this paper.
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