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Abstract
A simple and fast program for process development of silicon n- and p-channel MESFETs has been developed. The program is used for rapid extraction of electrical and geometrical device parameters. Doping concentration profiles as predicted by SUPREM are used as input data. The simulations are controlled by a very simple input file. Channel thickness, IV-characteristics, pinch-off voltage, threshold voltage etc. may quickly be deduced. The program accounts for velocity saturation and includes doping concentration dependent mobilities. Also the effects of series resistances and contact resistances are included in the calculations. A comparison with fabricated devices is made and the agreement is found to be good. Comparisons of CPU time and accuracy is made to a general 2-D simulation program. This 2-D software was found to give somewhat better agreement to measured device characteristics but at the expense of at least 100 times longer execution times.
Published Version
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