Abstract
Far-infrared RAIRS spectroscopy employing synchrotron radiation as a source, has been used to study the interaction of SnCl 4 on a thin-film silica surface. This has been made possible by growing the silica film on a highly reflecting tungsten substrate, enabling the conventional RAIRS geometry to be used. We show that reasonable S/N RAIRS spectra can be obtained in this region, even from films up to 1000 Å thick, enabling subtle details in the spectrum of the chemisorbed species to be obtained.
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