A failure mechanism of IGBT module in MMC and improvement

Abstract

In modular multi-level converter valves, as the blocked mode happens, the failure in IGBT modules often causes a chain explosion reaction, which masks the initial failure mechanism. The root cause of the failure was that the voltage, consisting of the diode forward voltage and the induced voltage on the parasitic inductance, exceeded the reverse blocking capability of the anti-parallel IGBT. The methods against the failure were studied from three aspects: decreasing the diode’s peak forward voltage, increasing the reverse blocking capability of IGBT, and minimizing the parasitic inductance of the package. It was found that the doping concentration’s effect on the diode’s peak forward voltage is not monotonic. It can be explained from the carrier density distribution during forward recovery transient that lower doping concentration reduces the carrier injection, and higher doping concentration reduces the excess carrier concentration in the doping region. Then, the influence of two buffer designs on the reverse blocking capability of IGBT was compared. It was found that a higher reverse blocking voltage would be achieved when a multi-proton implantation buffer replaced the diffused buffer. And the new design has almost no degradation in forward blocking capability.