Abstract
This paper presents a eutectic gold vapour laser (EGVL) which uses the eutectic alloy of gold and silicon, Au/3.15Si, as the lasant. It was observed that, at low input power operation, the presence of the silicon vapour could increase the output of the 627.8 nm laser line by (50–60)% when compared with a gold vapour laser (GVL) which uses pure gold as the lasant. The improved laser output for the EGVL may be explained by an increased electron density, as a result of Penning ionization of silicon atoms. However, for higher input power operation, the EGVL showed a slower rate of increase in its laser output power and was overtaken by GVLs at a tube operating temperature of around 1650°C. This may be explained by a lowering of the electron temperature owing to increasing inelastic collisions between the electrons and silicon atoms which, although excited, may not produce additional electrons.
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