Abstract
A eutectic etchant consisting of 50 mole percent KOH and 50 mole percent NaOH has been developed having a melting point of 170°C. The etchant has an etch rate on 〈100〉 GaAs of 0.2 μm per min at 325°C and is useful on 〈111〉 and 〈100〉 surfaces. The etchant reveals structures not developed with the molten KOH etchant.
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